Key Features
• Dynamic write
acceleration
• Redundant array of
independent NAND
(RAIN)
• Multistep data integrity
algorithm
• Adaptive thermal
protection
• Active garbage collection
• TRIM support
• Self-monitoring and
reporting technology
(SMART)
• Error correction code
(ECC)
• Device sleep support
• Launching with Micron
176-layer NANDâ´
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